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STMicroelectronicsPD55003-EHF-MOSFETs
Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
| EAR99 | |
| Active | |
| 8541.49.10.50 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| LDMOS | |
| 40 | |
| ±20 | |
| 20(Min) | |
| 2.5 | |
| 36@12.5V | |
| 2.4@12.5V | |
| 24@12.5V | |
| 1 | |
| 31700 | |
| 3(Min) | |
| 17 | |
| 1000 | |
| 52 | |
| -65 | |
| 165 | |
| Tube | |
| Industrial | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 3.5 |
| Verpackungsbreite | 9.4 |
| Verpackungslänge | 9.5 |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | PowerSO-10RF (Formed lead) |
| 3 | |
| Leitungsform | Gull-wing |
Amplifying and switching electronic signals in radio frequency environments is easy with this PD55003-E RF amplifier from STMicroelectronics. Its maximum power dissipation is 31700 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode.
| EDA / CAD Models |