Compliant with Exemption | |
EAR99 | |
Active | |
8541290095 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
Single | |
Enhancement | |
N | |
1 | |
LDMOS | |
40 | |
±20 | |
20(Min) | |
7 | |
86@12.5V | |
5.8@12.5V | |
76@12.5V | |
2.5(Min) | |
79000 | |
25(Min) | |
14.5 | |
1000 | |
50 | |
-65 | |
165 | |
Tube | |
Industrial | |
Befestigung | Surface Mount |
Verpackungshöhe | 3.5 |
Verpackungsbreite | 9.4 |
Verpackungslänge | 9.5 |
Leiterplatte geändert | 3 |
Lieferantenverpackung | PowerSO-10RF (Straight lead) |
3 | |
Leitungsform | Flat |
Implement a switching capability into your circuit design with this PD55025S-E RF amplifier from STMicroelectronics. Its maximum power dissipation is 79000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.