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STMicroelectronicsPD57018S-EHF-MOSFETs
Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Straight lead) Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 3.5 |
| Verpackungsbreite | 9.4 |
| Verpackungslänge | 9.5 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | PowerSO-10RF (Straight lead) |
| 3 | |
| Leitungsform | Flat |
By using a combination of metal-oxide-semiconductor technology, this PD57018S-E RF amplifier from STMicroelectronics can be implemented in an electronic circuit as a switching device. Its maximum power dissipation is 31700 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode.
| EDA / CAD Models |