STMicroelectronicsPD57030-EHF-MOSFETs
Trans RF MOSFET N-CH 65V 4A 3-Pin PowerSO-10RF (Formed lead) Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 3.5 |
| Verpackungsbreite | 9.4 |
| Verpackungslänge | 9.5 |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | PowerSO-10RF (Formed lead) |
| 3 | |
| Leitungsform | Gull-wing |
Implement a switching capability into your circuit design with this PD57030-E RF amplifier from STMicroelectronics. Its maximum power dissipation is 52800 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.
| EDA / CAD Models |