STMicroelectronicsPD57030S-EHF-MOSFETs
Trans RF MOSFET N-CH 65V 4A 3-Pin PowerSO-10RF (Straight lead) Tube
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| LDMOS | |
| 65 | |
| ±20 | |
| 10(Min) | |
| 4 | |
| 57@28V | |
| 2.3@28V | |
| 30@28V | |
| 1.8 | |
| 52800 | |
| 30(Min) | |
| 14 | |
| 1000 | |
| 53 | |
| -65 | |
| 165 | |
| Tube | |
| Industrial | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 3.5 |
| Verpackungsbreite | 9.4 |
| Verpackungslänge | 9.5 |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | PowerSO-10RF (Straight lead) |
| 3 | |
| Leitungsform | Flat |
If you're looking for a MOSFET that is compatible with radio frequency environments, this PD57030S-E RF amplifier from STMicroelectronics is for you! Its maximum power dissipation is 52800 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 1000 MHz.
| EDA / CAD Models |