STMicroelectronicsPD85025-EHF-MOSFETs
Trans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube
Compliant with Exemption | |
EAR99 | |
Obsolete | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
Befestigung | Surface Mount |
Verpackungshöhe | 3.5 |
Verpackungsbreite | 9.4 |
Verpackungslänge | 9.5 |
Leiterplatte geändert | 3 |
Lieferantenverpackung | PowerSO-10RF (Formed lead) |
3 | |
Leitungsform | Gull-wing |
Implement a switching capability into your circuit design with this PD85025-E RF amplifier from STMicroelectronics. Its maximum power dissipation is 79000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.