STMicroelectronicsPD85035-EHF-MOSFETs
Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Formed lead) Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| LDMOS | |
| 40 | |
| 15 | |
| 20(Min) | |
| 8 | |
| 76@12.5V | |
| 1.4@12.5V | |
| 45@12.5V | |
| 95000 | |
| 40(Typ) | |
| 17 | |
| 1000 | |
| 72 | |
| -65 | |
| 165 | |
| Tube | |
| Industrial | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 3.5 |
| Verpackungsbreite | 9.4 |
| Verpackungslänge | 9.5 |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | PowerSO-10RF (Formed lead) |
| 3 | |
| Leitungsform | Gull-wing |
Amplifying and switching electronic signals in radio frequency environments is easy with this PD85035-E RF amplifier from STMicroelectronics. Its maximum power dissipation is 95000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode.
| EDA / CAD Models |