NXP SemiconductorsPDTC114EU,115Digital-BJT
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin SC-70 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 100 | |
| 30@5mA@5V | |
| 10 | |
| 0.15@0.5mA@10mA | |
| 1 | |
| 200 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.35(Max) |
| Verpackungslänge | 2.2(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-70 |
| 3 |
Are you in need of the digital form of a traditional bipolar junction transistor? The NPN PDTC114EU,115 digital transistor from NXP Semiconductors is what you've been looking for. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.15@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |