NXP SemiconductorsPMBT3904M,315GP BJT
Trans GP BJT NPN 40V 0.2A 590mW 3-Pin DFN T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Automotive | Yes |
| PPAP | Unknown |
If you require a general purpose BJT that can handle high voltages, then the NPN PMBT3904M,315 BJT, developed by NXP Semiconductors, is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 590 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |