NXP SemiconductorsPMBT4401,235GP BJT
Trans GP BJT NPN 40V 0.6A 250mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.4(Max) |
| Verpackungslänge | 3(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Use this versatile NPN PMBT4401,235 GP BJT from NXP Semiconductors to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |