NXP SemiconductorsPMST2907A,115GP BJT
Trans GP BJT PNP 60V 0.6A 200mW 3-Pin SC-70 T/R
| Compliant | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.35(Max) |
| Verpackungslänge | 2.2(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-70 |
| 3 | |
| Leitungsform | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP PMST2907A,115 GP BJT from NXP Semiconductors. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |