| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.75 |
| Automotive | No |
| PPAP | No |
| Typ | PNP |
| Kategorie | Bipolar Power |
| Material | Si |
| Konfiguration | Single Dual Collector |
| Anzahl von Elementen pro Chip | 1 |
| Max. Kollektor-Basis-Spannung (V) | 450 |
| Max. Kollektor-Emitterspannung (V) | 450 |
| Max. Emitter-Basis-Spannung (V) | 5 |
| Max. Basis-Emitter-Sättigungsspannung (V) | 1@2mA@20mA |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 0.6@2mA@20mA |
| Max. DC-Kollektorstrom (A) | 0.5 |
| Mindestgleichstromverstärkung | 50@10mA@10V |
| Max. Leistungsaufnahme (mW) | 1500 |
| Mindestbetriebstemperatur (°C) | -65 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.57 mm |
| Verpackungsbreite | 3.5 mm |
| Verpackungslänge | 6.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| Stiftanzahl | 4 |
| Leitungsform | Gull-wing |
If you require a general purpose BJT that can handle high voltages, then the PNP PZTA96ST1G BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 450 V and a maximum emitter base voltage of 5 V.
