ToshibaRN1102MFV,L3FDigital-BJT
Trans Digital BJT NPN 50V 0.1mA 150mW 3-Pin VESM T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 100 | |
| 50@10mA@5V | |
| 10 | |
| 0.3@0.5mA@5mA | |
| 1 | |
| 150 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 1.2 |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | VESM |
| 3 |
Do you need a device that can offer the benefits of traditional BJTs with the compatibility for digital signal processors? The NPN RN1102MFV,L3F digital transistor from Toshiba is your solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 50@10mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.25mA@5mA V. Its maximum power dissipation is 150 mW. It has a maximum collector emitter voltage of 50 V. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |