ToshibaRN1110MFV,L3F(TDigital-BJT
Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
| Compliant | |
| Active | |
| Automotive | No |
| PPAP | No |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 1.2 |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | VESM |
| 3 |
| EDA / CAD Models |