ToshibaRN1403TE85LFDigital-BJT
Trans Digital BJT NPN 50V 0.1mA 200mW 3-Pin S-Mini T/R
| Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 100 | |
| 70@10mA@5V | |
| 250 | |
| 22 | |
| 0.3@0.25mA@5mA | |
| 1 | |
| 200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.1 |
| Verpackungsbreite | 1.5 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | S-MINI |
| Lieferantenverpackung | S-Mini |
| 3 | |
| Leitungsform | Gull-wing |
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this NPN RN1403(TE85L,F) digital transistor from Toshiba, ideal for any digital signal processing circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@10mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.25mA@5mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |