onsemiSBC807-25WT1GGP BJT

Trans GP BJT PNP 45V 0.5A 460mW 3-Pin SC-70 T/R Automotive AEC-Q101

Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the PNP SBC807-25WT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 460 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

Import TariffMay apply to this part

20.900 Stück: heute versandbereit

    Total0,09 €Price for 1

    • Service Fee  6,10 €

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2304+
      Manufacturer Lead Time:
      21 Wochen
      Minimum Of :
      1
      Maximum Of:
      20900
      Country Of origin:
      China
         
      • Price: 0,0894 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2304+
      Manufacturer Lead Time:
      21 Wochen
      Country Of origin:
      China
      • In Stock: 20.900 Stück
      • Price: 0,0894 €