onsemiSBC846ALT1GGP BJT

Trans GP BJT NPN 65V 0.1A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101

If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's NPN SBC846ALT1G general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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544 Stück: heute versandbereit

    Total0,16 €Price for 1

    • Service Fee  6,10 €

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2226+
      Manufacturer Lead Time:
      11 Wochen
      Minimum Of :
      1
      Maximum Of:
      544
      Country Of origin:
      China
         
      • Price: 0,1571 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2226+
      Manufacturer Lead Time:
      11 Wochen
      Country Of origin:
      China
      • In Stock: 544 Stück
      • Price: 0,1571 €