onsemiSBC846ALT1GGP BJT
Trans GP BJT NPN 65V 0.1A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Compliant | |
EAR99 | |
Active | |
8541.29.00.75 | |
Automotive | Yes |
PPAP | Yes |
Befestigung | Surface Mount |
Verpackungshöhe | 0.94 mm |
Verpackungsbreite | 1.3 mm |
Verpackungslänge | 2.9 mm |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-23 |
3 | |
Leitungsform | Gull-wing |
If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's NPN SBC846ALT1G general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.