onsemiSBC846BDW1T1GGP BJT

Trans GP BJT NPN 65V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R

Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN SBC846BDW1T1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 380 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Import TariffMay apply to this part

Auf Lager: 63.000 Stück

Regional Inventory: 9.000

    Total0,20 €Price for 1

    9.000 auf Lager: Versand in vsl. 10 Tagen

    • Versand in vsl. 10 Tagen

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2317+
      Manufacturer Lead Time:
      0 Wochen
      Country Of origin:
      China
      • In Stock: 9.000 Stück
      • Price: 0,2027 €
    • (3000)

      Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2506+
      Manufacturer Lead Time:
      10 Wochen
      Country Of origin:
      China
      • In Stock: 54.000 Stück
      • Price: 0,0383 €