onsemiSBC846BDW1T1GGP BJT
Trans GP BJT NPN 65V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R
Compliant | |
EAR99 | |
Active | |
8541.29.00.75 | |
Automotive | Yes |
PPAP | Yes |
Befestigung | Surface Mount |
Verpackungshöhe | 0.9 mm |
Verpackungsbreite | 1.25 mm |
Verpackungslänge | 2 mm |
Leiterplatte geändert | 6 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SC-88 |
6 |
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN SBC846BDW1T1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 380 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
EDA / CAD Models |