onsemiSBC846BPDW1T1GGP BJT
Trans GP BJT NPN/PNP 65V 0.1A 380mW 6-Pin SC-88 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | Yes |
| PPAP | Yes |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 mm |
| Verpackungsbreite | 1.25 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-88 |
| 6 |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile npn and PNP SBC846BPDW1T1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 380 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6@NPN|5@PNP V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |