| Compliant | |
| EAR99 | |
| NRND | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
Make an effective common gate amplifier using this SI2343CDS-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1250 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |