Infineon Technologies AGSKW25N120FKSA1IGBT-Chip
Trans IGBT Chip N-CH 1200V 46A 313W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| SKW25N120FKSA1 | |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±20 | |
| 1200 | |
| 3.1 | |
| 46 | |
| 0.1 | |
| 313 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.1(Max) |
| Verpackungsbreite | 5.16(Max) |
| Verpackungslänge | 16.03(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO-247 |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
The SKW25N120FKSA1 IGBT transistor from Infineon Technologies will work effectively even with higher currents. Its maximum power dissipation is 313000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |