Infineon Technologies AGSMBTA14E6327HTSA1Darlington BJT
Trans Darlington NPN 30V 0.3A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
Compliant | |
EAR99 | |
Obsolete | |
SMBTA14E6327HTSA1 | |
Automotive | Yes |
PPAP | Unknown |
NPN | |
Single | |
1 | |
30 | |
30 | |
10 | |
2@0.1mA@100mA | |
0.3 | |
0.1 | |
1.5@0.1mA@100mA | |
125(Min) | |
10000@10mA@5V|20000@100mA@5V | |
330 | |
-65 | |
150 | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 1(Max) |
Verpackungsbreite | 1.3 |
Verpackungslänge | 2.9 |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-23 |
3 | |
Leitungsform | Gull-wing |
With one of these NPN SMBTA14E6327HTSA1 Darlington transistors from Infineon Technologies, you'll be able to process much higher current gain values within your circuit. This product's maximum continuous DC collector current is 0.3 A, while its minimum DC current gain is 10000@10mA@5 V|20000@100mA@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA V. This Darlington transistor array's maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 2@0.1mA@100mA V. Its maximum power dissipation is 330 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.