Infineon Technologies AGSMBTA56E6327HTSA1GP BJT
Trans GP BJT PNP 80V 0.5A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 80 | |
| 4 | |
| 0.25@10mA@100mA | |
| 0.5 | |
| 100@100mA@1V|100@10mA@1V | |
| 330 | |
| 100(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
The versatility of this PNP SMBTA56E6327HTSA1 GP BJT from Infineon Technologies makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |