onsemiSMMBT6427LT1GDarlington BJT
Trans Darlington NPN 40V 0.5A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Single | |
| 1 | |
| 40 | |
| 40 | |
| 12 | |
| 2@0.5mA@500mA | |
| 0.5 | |
| 0.05 | |
| 1.2@0.5mA@50mA|1.5@0.5mA@500mA | |
| 10000@10mA@5V|14000@500mA@5V|20000@100mA@5V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Traditional transistors can produce low current gains. One of ON Semiconductor's NPN SMMBT6427LT1G Darlington transistors can provide you with the much higher values you need. This Darlington transistor array's maximum emitter base voltage is 12 V, while its maximum base emitter saturation voltage is 2@0.5mA@500mA V. This product's maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 10000@10mA@5 V|20000@100mA@5V|14000@500mA@5V. It has a maximum collector emitter saturation voltage of 1.2@0.5mA@50mA|1.5@0.5mA@500mA V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 12 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |