onsemiSMUN2211T1GDigital-BJT
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Single | |
| 50 | |
| 100 | |
| 35@5mA@10V | |
| 10 | |
| 0.25@0.3mA@10mA | |
| 1 | |
| 338 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.09 |
| Verpackungsbreite | 1.5 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-59 |
| 3 | |
| Leitungsform | Gull-wing |
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this NPN SMUN2211T1G digital transistor from ON Semiconductor, ideal for any digital signal processing circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 338 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |