onsemiSMUN5131DW1T1GDigital-BJT
Trans Digital BJT PNP 50V 100mA 385mW Automotive AEC-Q101 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| Automotive | Yes |
| PPAP | Yes |
| PNP | |
| Dual | |
| 50 | |
| 100 | |
| 8@5mA@10V | |
| 2.2 | |
| -55 to 150 | |
| 1 | |
| 0.25@5mA@10mA | |
| 385 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| <30 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-88 |
| 6 |
If you require the digital form of a traditional BJT for your signal processing needs, then the PNP SMUN5131DW1T1G digital transistor from ON Semiconductor is for you. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 8@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@5mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.
| EDA / CAD Models |