onsemiSMUN5214DW1T1GDigital-BJT
Trans Digital BJT NPN 50V 0.1A 385mW 6-Pin SC-88 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Dual | |
| 50 | |
| 100 | |
| 80@5mA@10V | |
| 10 | |
| 0.25@0.3mA@10mA | |
| -55 to 150 | |
| 0.21 | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 50 to 120 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-88 |
| 6 |
If you are building a digital signal processing device, make sure to use ON Semiconductor's NPN SMUN5214DW1T1G digital transistor's within your circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.
| EDA / CAD Models |