onsemiSMUN5233DW1T1GDigital-BJT
Trans Digital BJT NPN 50V 0.1A 385mW 6-Pin SC-88 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Dual | |
| 50 | |
| 100 | |
| 80@5mA@10V | |
| 4.7 | |
| 0.25@1mA@10mA | |
| 0.1 | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-88 |
| 6 |
Compared to traditional BJ transistors, the NPN SMUN5233DW1T1G digital transistor from ON Semiconductor is meant to be used with digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.
| EDA / CAD Models |