STMicroelectronicsST13003DNGP BJT
Trans GP BJT NPN 400V 1A 20000mW 3-Pin(3+Tab) SOT-32 Bag
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 400 | |
| 9 | |
| 1.2@125mA@0.5A|1.3@330mA@1A | |
| 0.7@125mA@0.5A|1.2@330mA@1A | |
| 1 | |
| 5@1A@10V|6@0.5A@2V | |
| 20000 | |
| -55 | |
| 150 | |
| Bag | |
| Befestigung | Through Hole |
| Verpackungshöhe | 10.8(Max) |
| Verpackungsbreite | 2.7(Max) |
| Verpackungslänge | 7.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | SOT-32 |
| 3 | |
| Leitungsform | Through Hole |
The three terminals of this NPN ST13003DN GP BJT from STMicroelectronics give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 20000 mW. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |