STMicroelectronicsST901TDarlington BJT
Trans Darlington NPN 350V 4A 100000mW 3-Pin(3+Tab) TO-220AB Tube
EAR99 | |
Active | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
NPN | |
Single | |
1 | |
350 | |
Bipolar | |
5 | |
1.8@20mA@2A | |
4 | |
2@20mA@2A | |
1800@2A@2V|500@4A@2V | |
100000 | |
-65 | |
150 | |
Industrial | |
Tube | |
Befestigung | Through Hole |
Verpackungshöhe | 9.15(Max) |
Verpackungsbreite | 4.6(Max) |
Verpackungslänge | 10.4(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO-220 |
Lieferantenverpackung | TO-220AB |
3 | |
Leitungsform | Through Hole |
Amplify your current with the NPN ST901T Darlington transistor, developed by STMicroelectronics. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 500@4A@2 V|1800@2A@2V. It has a maximum collector emitter saturation voltage of 2@20mA@2A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 1.8@20mA@2A V. Its maximum power dissipation is 100000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.