STMicroelectronicsSTAC4932FHF-MOSFETs
Trans RF MOSFET N-CH 200V 4-Pin STAC244F Loose
Compliant | |
EAR99 | |
NRND | |
EA | |
Automotive | No |
PPAP | No |
Dual Common Source | |
Enhancement | |
N | |
2 | |
STAC | |
200 | |
±20 | |
4 | |
250 | |
1000 | |
570@100V | |
8@100V | |
134@100V | |
6 | |
1200(Typ) | |
26 | |
250 | |
60 | |
-65 | |
200 | |
Loose | |
Industrial | |
Befestigung | Surface Mount |
Verpackungshöhe | 4.32(Max) |
Verpackungsbreite | 9.91(Max) |
Verpackungslänge | 20.7(Max) |
Leiterplatte geändert | 4 |
Lieferantenverpackung | STAC244F |
4 | |
Leitungsform | Flat |
By using a combination of metal-oxide-semiconductor technology, this STAC4932F RF amplifier from STMicroelectronics can be implemented in an electronic circuit as a switching device. The component will be shipped in tray format. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 250 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 200 °C.
EDA / CAD Models |