| RoHS EU | Compliant with Exemption |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.4(Max) |
| Verpackungsbreite | 6.2(Max) |
| Verpackungslänge | 6.6(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-252 |
| Lieferantenverpackung | DPAK |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
Amplify electronic signals and switch between them with the help of STMicroelectronics' STD11N65M2 power MOSFET. Its maximum power dissipation is 85000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes mdmesh ii plus technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
