| RoHS EU | Compliant with Exemption |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.4(Max) |
| Verpackungsbreite | 6.2(Max) |
| Verpackungslänge | 6.6(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-252 |
| Lieferantenverpackung | DPAK |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? STMicroelectronics' STD3N80K5 power MOSFET can provide a solution. Its maximum power dissipation is 110000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes supermesh technology.
