RoHS EU | Compliant with Exemption |
ECCN (USA) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
Befestigung | Through Hole |
Verpackungshöhe | 16.4(Max) |
Verpackungsbreite | 4.6(Max) |
Verpackungslänge | 10.4(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-220FP |
Stiftanzahl | 3 |
Leitungsform | Through Hole |
This STF10N80K5 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 30000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh technology.