STMicroelectronicsSTGB30M65DF2IGBT-Chip
Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| 650 | |
| ±20 | |
| 1.55 | |
| 60 | |
| 250 | |
| 258 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Industrial | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.6(Max) |
| Verpackungsbreite | 9.35(Max) |
| Verpackungslänge | 10.4(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-263 |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
This powerful and secure STGB30M65DF2 IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 258000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
| EDA / CAD Models |