STMicroelectronicsSTGB30V60DFIGBT-Chip
Trans IGBT Chip N-CH 600V 60A 258W 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| 600 | |
| ±20 | |
| 1.9 | |
| 60 | |
| 0.25 | |
| 258 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Industrial | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.6(Max) |
| Verpackungsbreite | 9.35(Max) |
| Verpackungslänge | 10.4(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-263 |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
The STGB30V60DF IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 600 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |