STMicroelectronicsSTGB35N35LZT4IGBT-Chip
Trans IGBT Chip N-CH 320V 40A 176W 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Unknown |
| PPAP | Yes |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.6(Max) mm |
| Verpackungsbreite | 9.35(Max) mm |
| Verpackungslänge | 10.4(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-263 |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Don't be afraid to step up the amps in your device when using this STGB35N35LZT4 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 176000 mW. It has a maximum collector emitter voltage of 380 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
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