STMicroelectronicsSTGB8NC60KDT4IGBT-Chip
Trans IGBT Chip N-CH 600V 15A 65W 3-Pin(2+Tab) D2PAK T/R
Compliant with Exemption | |
EAR99 | |
Active | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
Befestigung | Surface Mount |
Verpackungshöhe | 4.6(Max) |
Verpackungsbreite | 9.35(Max) |
Verpackungslänge | 10.4(Max) |
Leiterplatte geändert | 2 |
Tab | Tab |
Standard-Verpackungsname | TO-263 |
Lieferantenverpackung | D2PAK |
3 | |
Leitungsform | Gull-wing |
The STGB8NC60KDT4 IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 65000 mW. It has a maximum collector emitter voltage of 600 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
EDA / CAD Models |