STMicroelectronicsSTGD5NB120SZ-1IGBT-Chip
Trans IGBT Chip N-CH 1200V 10A 75W 3-Pin(3+Tab) IPAK Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.2(Max) |
| Verpackungsbreite | 2.4(Max) |
| Verpackungslänge | 6.6(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO-251 |
| Lieferantenverpackung | IPAK |
| 3 | |
| Leitungsform | Through Hole |
You can use this STGD5NB120SZ-1 IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 75000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a maximum operating temperature of 150 °C. It is made in a single configuration.
| EDA / CAD Models |