STMicroelectronicsSTGD8NC60KDT4IGBT-Chip
Trans IGBT Chip N-CH 600V 15A 62W 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.4(Max) |
| Verpackungsbreite | 6.2(Max) |
| Verpackungslänge | 6.6(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-252 |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Don't be afraid to step up the amps in your device when using this STGD8NC60KDT4 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 62000 mW. It has a maximum collector emitter voltage of 600 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |
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