STMicroelectronicsSTGE50NC60WDIGBT-Module
Trans IGBT Module N-CH 600V 100A 260000mW
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Screw |
| Verpackungshöhe | 9.1(Max) |
| Verpackungsbreite | 25.5(Max) |
| Verpackungslänge | 38.2(Max) |
| Leiterplatte geändert | 4 |
| Lieferantenverpackung | ISOTOP |
| 4 |
This powerful and secure STGE50NC60WD IGBT transistor from STMicroelectronics will make sure your circuit works properly. Its maximum power dissipation is 260000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with powermesh technology.
| EDA / CAD Models |