STMicroelectronicsSTGFW40V60DFIGBT-Chip
Trans IGBT Chip N-CH 600V 80A 62.5W 3-Pin(3+Tab) TO-3PF Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 26.7(Max) |
| Verpackungsbreite | 5.7(Max) |
| Verpackungslänge | 15.7(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3PF |
| 3 | |
| Leitungsform | Through Hole |
Use the STGFW40V60DF IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is -55 to 150 mW. It has a maximum collector emitter voltage of 25 V. It is made in a dual parallel configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |