STMicroelectronicsSTGP30M65DF2IGBT-Chip
Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| 650 | |
| ±20 | |
| 1.55 | |
| 60 | |
| 250 | |
| 258 | |
| -55 | |
| 175 | |
| Tube | |
| Industrial | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) |
| Verpackungsbreite | 4.6(Max) |
| Verpackungslänge | 10.4(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Use the STGP30M65DF2 IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 258000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
| EDA / CAD Models |