STMicroelectronicsSTGW15H120DF2IGBT-Chip
Trans IGBT Chip N-CH 1200V 30A 259W 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| 1200 | |
| ±20 | |
| 2.1 | |
| 30 | |
| 0.25 | |
| 259 | |
| -55 | |
| 150 | |
| Tube | |
| Industrial | |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.15(Max) |
| Verpackungsbreite | 5.15(Max) |
| Verpackungslänge | 15.75(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Use the STGW15H120DF2 IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 259000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes field stop|trench technology. It is made in a single configuration.
| EDA / CAD Models |