STMicroelectronicsSTGW15M120DF3IGBT-Chip
Trans IGBT Chip N-CH 1200V 30A 259W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.15(Max) |
| Verpackungsbreite | 5.15(Max) |
| Verpackungslänge | 15.75(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
The STGW15M120DF3 IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 259000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration. This device is made with field stop|trench technology.
| EDA / CAD Models |