STMicroelectronicsSTGW28IH125DFIGBT-Chip
Trans IGBT Chip N-CH 1250V 60A 375W 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| 1250 | |
| ±20 | |
| 2 | |
| 60 | |
| 0.25 | |
| 375 | |
| -55 | |
| 175 | |
| Tube | |
| Industrial | |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.15(Max) |
| Verpackungsbreite | 5.15(Max) |
| Verpackungslänge | 15.75(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
You won't need to worry about any lagging in your circuit with this STGW28IH125DF IGBT transistor from STMicroelectronics. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 1250 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes field stop|trench technology.
| EDA / CAD Models |