STMicroelectronicsSTGW35HF60WIGBT-Chip
Trans IGBT Chip N-CH 600V 60A 200W 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.15(Max) |
| Verpackungsbreite | 5.15(Max) |
| Verpackungslänge | 15.75(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Don't be afraid to step up the amps in your device when using this STGW35HF60W IGBT transistor from STMicroelectronics. Its maximum power dissipation is 200000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |