STMicroelectronicsSTGW39NC60VDIGBT-Chip
Trans IGBT Chip N-CH 600V 80A 250W 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 600 | |
| ±20 | |
| 1.8 | |
| 80 | |
| 0.1 | |
| 250 | |
| -55 | |
| 150 | |
| Tube | |
| Industrial | |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.15(Max) |
| Verpackungsbreite | 5.15(Max) |
| Verpackungslänge | 15.75(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Minimize the current at your gate with the STGW39NC60VD IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 250000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |