STMicroelectronicsSTGW60H65DRFIGBT-Chip
Trans IGBT Chip N-CH 650V 120A 420W 3-Pin(3+Tab) TO-247 Tube
| EAR99 | |
| Obsolete | |
| EA | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.15(Max) |
| Verpackungsbreite | 5.15(Max) |
| Verpackungslänge | 15.75(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
The STGW60H65DRF IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 420000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |