STMicroelectronicsSTGW80H65DFBIGBT-Chip

Trans IGBT Chip N-CH 650V 120A 470W 3-Pin(3+Tab) TO-247 Tube

This fast-switching STGW80H65DFB IGBT transistor from STMicroelectronics will be perfect in your circuit. Its maximum power dissipation is 469000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

596 Stück: Versand in vsl. 3 Tagen

    Total5,67 €Price for 1

    • Versand in vsl. 3 Tagen

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      • In Stock: 596 Stück
      • Price: 5,6668 €